Microwave technologies and plasma processing are further core competencies of InVerTec.
Heating and drying procedures are classical applications for microwaves1. At InVerTec, these technologies are combined with our know-how from other areas, such as fluidized-bed and CVD processes, with the intention of establishing new products and procedures.
For a variety of applications, the use of microwave technology can lead to improved energy efficiency in comparison to conventional heating processes. Microwave heating is based on the dielectric heating effect2 and can thus take advantage of specific material properties. Often, more direct heating of reactant agents or drying goods is possible, without undesired side effects such as heating of the reactor wall itself. In most cases, this leads to a significant increase in energy efficiency.
Generally, whenever the heat input or temperature control of a process is problematic, the use of microwaves provides major advantages, particularly when one material needs to be selectively heated while another is required to stay cold.
Furthermore, microwave processing makes it possible to attain process parameters which could not be achieved by conventional methods. Microwave-assisted plasma3 treatments cover a broad range of applications. The main applications are surface coating, such as plasma coating, plasma etching, and plasma sterilization processes.
Microwaves are high-frequency electromagnetic waves that are usually used for thermal processing. For these applications, a frequency of 2.45 GHz is common.
Heat generation in poorly conductive or non-conductive materials, caused by a high-frequency alternating field, is called dielectric heating. Materials with a non-symmetric molecular structure form an electric dipole and begin to oscillate in the alternating field. As a result, electric engergy is converted into heat. Materials with a symmetrical structure cannot be heated because of the missing electric dipole.
The state of plasma describes a condition of a gas whose components are partially or completely ionized.
 |
 |
Microwave power supply :
Switch mode power supply and separate head
Frequency:
2.45 GHz
Microwave head:
Water-cooled magnetron with isolator, N-BNC detector
Output power:
2kW, 3kW; Adjustable from 0 -100% in CW and pulsating modes
Applicator:
Vacuum vessel 640mm x 700 mm
Control panel:
Lab-View© based measurement of all process parameters; MW-power control by pressure measurement
Options:
Temperature measurement by fiber optics; Plasma control sensor; Auto-tuning system; Rotating sample holder
Microwave power supply:
Switch mode power supply and separate head
Frequency:
2.45 GHz
Microwave head:
Water cooled magnetron, with isolator, N-BNC-Detector
Output Power:
3kW, 6kW; Adjustable from 10-100% in CW mode and from 0-100% in pulsed mode
Applicator:
Mono-mode Cavity
Control panel:
Lab-View© based measurement of all process parameters
Options:
Pyrometer; Plasma control sensor; Auto-tuning system; Mass flow controller; Vaporizer
Microwave power supply:
Switch mode power supply and separate head
Frequency:
2.45 GHz, 915 MHz
Microwave head:
Water cooled magnetron, with isolator, N-BNC detector
Output power:
2kW, 3kW, 6kW; Adjustable from 10-100% in CW mode and from 0-100% pulsating mode
Applicator:
Mono-mode cavity
Control panel:
Lab-View© based measurement of all process parameters
Options:
Pyrometer; Plasma control sensor; Auto-tuning system; Lock system for working under controlled atmosphere
Microwave power supply:
Switch mode power supply and separate head
Frequency:
2.45 GHz, 915 MHz
Microwave head:
Water cooled magnetron, with isolator, N-BNC detector
Output power:
2kW, 3kW, 6kW; Adjustable from 10-100% in CW mode and from 0-100% in pulsating mode
Applicator:
Mono-mode cavity
Control panel:
Lab-View© based measurement of all process parameters
Options:
Pyrometer; Plasma control sensor; Auto-tuning system; Batch or continuous operation; Mass flow controller
|
